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⚛️ Physics  ·  Semiconductor Electronics  ·  NEET & JEE

The NMOS long-channel drain current in saturation (ID,sat) ∝

Answer: (VGS - Vth)².

  • A (VGS - Vth)
  • B (VGS - Vth)²
  • C (VGS - Vth)0.5
  • D VDS

Correct answer: B. (VGS - Vth)²

Explanation: Long-channel MOSFET saturation: ID = (1/2) mu Cox (W/L) (VGS - Vth)². Quadratic dependence on overdrive voltage.

Conductorconduction bandvalence bandbands overlapSemiconductorconduction bandvalence bandsmall gap (~1 eV)Insulatorconduction bandvalence bandlarge gap(> 3 eV)

Conductors have overlapping bands, semiconductors have a small energy gap that can be bridged by heat or doping, and insulators have a large gap that blocks conduction.

Concept context

Band theory, p-n junction, diodes, transistors, logic gates, and integrated circuits.

Read the full Semiconductor Electronics notes →